標題: | The effect of ZnS content on the luminescence and electrical properties of ZnO : Zn phosphor |
作者: | Lin, CH Chiou, BS Chang, CH Lin, JD 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2002 |
摘要: | Zinc oxide phosphors (ZnO : Zn) were prepared by solid state sintering of ZnO powders with ZnS and screen printed onto ITO-coated glass substrate. The effect of ZnS content and sintering temperature on the cathodoluminescence brightness, efficiency and electrical properties of ZnO : Zn were studied. Samples with 5 wt % ZnS and sintered at 1100 degreesC exhibit the highest brightness and efficiency among all the compositions studied. The brightness of phosphors increases linearly as the accelerating voltage V and/or beam current I increases. While the efficiency decreases initially and then reaches a constant value as V and/or I increases. Both the conductivity sigma and carrier concentration n of the phosphor increase with the increase of ZnS content in the starting composition. Results of Hall measurement suggest that the ZnO : Zn phosphor is an n-type conductor with an electron mobility of around 175cm(2)/V-s. For specimen with 5 wt % ZnS, both sigma and n increases initially with the increase of sintering temperature T, and reaches a constant value at T greater than or equal to 1000 degreesC. The unreacted ZnS found in samples sintered at T < 1000 degreesC explains the temperature dependence of sigma and n. (C) 2002 Kluwer Academic Publishers. |
URI: | http://hdl.handle.net/11536/29128 http://dx.doi.org/10.1023/A:1013170610826 |
ISSN: | 0957-4522 |
DOI: | 10.1023/A:1013170610826 |
期刊: | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS |
Volume: | 13 |
Issue: | 1 |
起始頁: | 1 |
結束頁: | 5 |
Appears in Collections: | Articles |
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