Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Zakharova, A | en_US |
dc.contributor.author | Yen, ST | en_US |
dc.contributor.author | Chao, KA | en_US |
dc.date.accessioned | 2019-04-03T06:39:24Z | - |
dc.date.available | 2019-04-03T06:39:24Z | - |
dc.date.issued | 2001-12-15 | en_US |
dc.identifier.issn | 2469-9950 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.64.235332 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29186 | - |
dc.description.abstract | We have investigated the hybridization of the electron states. the light-hole states and the heavy-hole states in InAs/GaSb broken-gap quantum wells. This effect is profound Mien the InAs layer and the GaSb layer are sufficiently thick such that the electron level lies below the heavy-hole level and the light-hole level at zone center. To calculate the dispersions and the wave functions in these structures we have applied the scattering matrix algorithm to the eight-band k.p model. We have found a hybridization gap as large as 20 meV resulting from the anticrossing of the electron and the light-hole dispersion curves. A multiple anticrossing of the electron states. the light-hole states and the heavy-hole states may occur when the heavy hole level lies in the hybridization gap produced by the electron states and the light-hole states. This unusual hybridization of the three subbands. which behaves differently for the "spin-up" and the "spin-down" states. has been investigated in details around the anticrossing point, While the electronlike and light holelike states mix strongly, the heavy holelike state may remain unperturbed. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.64.235332 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 64 | en_US |
dc.citation.issue | 23 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000172867900116 | en_US |
dc.citation.woscount | 31 | en_US |
Appears in Collections: | Articles |
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