標題: Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells
作者: Zakharova, A
Yen, ST
Chao, KA
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-十二月-2001
摘要: We have investigated the hybridization of the electron states. the light-hole states and the heavy-hole states in InAs/GaSb broken-gap quantum wells. This effect is profound Mien the InAs layer and the GaSb layer are sufficiently thick such that the electron level lies below the heavy-hole level and the light-hole level at zone center. To calculate the dispersions and the wave functions in these structures we have applied the scattering matrix algorithm to the eight-band k.p model. We have found a hybridization gap as large as 20 meV resulting from the anticrossing of the electron and the light-hole dispersion curves. A multiple anticrossing of the electron states. the light-hole states and the heavy-hole states may occur when the heavy hole level lies in the hybridization gap produced by the electron states and the light-hole states. This unusual hybridization of the three subbands. which behaves differently for the "spin-up" and the "spin-down" states. has been investigated in details around the anticrossing point, While the electronlike and light holelike states mix strongly, the heavy holelike state may remain unperturbed.
URI: http://dx.doi.org/10.1103/PhysRevB.64.235332
http://hdl.handle.net/11536/29186
ISSN: 2469-9950
DOI: 10.1103/PhysRevB.64.235332
期刊: PHYSICAL REVIEW B
Volume: 64
Issue: 23
起始頁: 0
結束頁: 0
顯示於類別:期刊論文


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