標題: The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition
作者: Yang, MJ
Chien, CH
Leu, CC
Zhang, RJ
Wu, SC
Huang, TY
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: (Ba,Sr)TiO3;LSMCD;low pressure rapid thermal post-annealing;process temperature;leakage current density;residue organics
公開日期: 1-十二月-2001
摘要: The technique of low-pressure post-annealing process with additional second-step annealing for preparation of the Ba0.7Sr0.3TiO3 thin films deposited by liquid source misted chemical deposition (LSMCD) has been proposed. With employing this annealing procedure, the leakage current density can be significantly eliminated by approximately one order of magnitude at 2 V. In particular, process temperature can be reduced from 650 degreesC to 600 degreesC without suffering deteriorated crystallinity issue, which is identified by both C-V measurement and X-ray diffraction spectrum. The extracted dielectric constant is 310 with extreamly low loss tangent of 0.005. The spectrum of atomic force microscopy (AFM) shows that this low-pressure process results in smoother surface topography. Moreover, thermal desorption spectrums assure that less residual organics and contaminations were left after low pressure post-annealing. This may be one of the reasons for lowering crystallization temperature and the improved electrical properties.
URI: http://dx.doi.org/10.1143/JJAP.40.L1333
http://hdl.handle.net/11536/29213
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.L1333
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 40
Issue: 12A
起始頁: L1333
結束頁: L1335
顯示於類別:期刊論文


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