標題: Comparison of InGaP/InGaAs/GaAs and InGaPtInGaAs/AlGaAs pseudomorphic high electron mobility transistors
作者: Huang, CE
Lee, CP
Huang, RT
Chang, MCF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: InGaP;AlGaAs;PHEMT;gate length;carrier confinement;microwave
公開日期: 1-十二月-2001
摘要: We have studied the DC and RF characteristics of InGaP/InGaAs/AlGaAs and InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMTs). The InGaP gate barrier provides adequate carrier confinement for the channel carriers and at the same time eliminates the problems associated with AlGaAs. Excellent device performance was obtained for both types of devices. No short channel effect was observed at a gate length as low as 0.3 mum. The InGaP/InGaAs/AlGaAs PHEMTS are superior in that they have higher transconductance, higher current carrying capability and better RF performance. This is attributed to the better carrier confinement at the back channel. These results demonstrate that InGaP/InGaAs/AlGaAs PHEMTs are favorable candidates for microwave applications.
URI: http://hdl.handle.net/11536/29229
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 12
起始頁: 6761
結束頁: 6763
顯示於類別:期刊論文


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