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dc.contributor.authorCHUNG, SJen_US
dc.contributor.authorWU, LKen_US
dc.date.accessioned2014-12-08T15:04:25Z-
dc.date.available2014-12-08T15:04:25Z-
dc.date.issued1993-08-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/22.241681en_US
dc.identifier.urihttp://hdl.handle.net/11536/2925-
dc.description.abstractIn this paper, propagation characteristics of even-symmetric hybrid modes in a waveguide-shielded microstrip in the presence of a resistively coated dielectric layer affixed to the top cover of the housing is analyzed with the method of lines. The resistive boundary condition is employed to model the resistive film. A shielded microstrip line having a unity strip-width-to-substrate-thickness ratio (i.e., w/h1 = 1) placed on top of a 0.635-mm-thick alumina substrate is considered. Based on a 10h1 x 7h1 reference housing, four different housing arrangements are obtained by varying the structural parameters of the resistively coated dielectric layer. Results obtained indicate that the effects of both the housing walls and the resistively coated upper dielectric layer on the dominant (quasi-TEM) mode are insignificant and may be ignored when frequency is above 15 GHz. For the higher order modes, resistive film appears to be transparent when film resistance is greater than about 1 kOMEGA, it behaves as a good conductor when film resistance is much smaller than 100 OMEGA, and in between it results in nonlinear (and even oscillatory) higher order modal behaviors. Apparently, due to the increasing field concentration inside the upper dielectric (as suggested by the increasing epsilon(reff)) for a given mode, both the maximum attenuation and the film resistance needed to achieve it increase with frequency and dielectric constant of the upper dielectric layer.en_US
dc.language.isoen_USen_US
dc.titleANALYSIS OF THE EFFECTS OF A RESISTIVELY COATED UPPER DIELECTRIC LAYER ON THE PROPAGATION CHARACTERISTICS OF HYBRID MODES IN A WAVE-GUIDE-SHIELDED MICROSTRIP USING THE METHOD OF LINESen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/22.241681en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume41en_US
dc.citation.issue8en_US
dc.citation.spage1393en_US
dc.citation.epage1399en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department傳播研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.identifier.wosnumberWOS:A1993MG18000021-
dc.citation.woscount4-
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