標題: Using NH3 plasma pretreatment to improve the characteristics of organic spin-on low-k materials for copper metallization
作者: Chang, KM
Tseng, MH
Deng, IC
Tsai, YP
Yeh, SJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: NH3 plasma;Cu metalization;ashing damage;Cu diffusion;diffusion barriers
公開日期: 1-Nov-2001
摘要: Organic low-k materials have got more attention for reducing integrated circuits RC delay time. A serious problem, in degradation of organic low-k materials is induced by ashing step, In this study, an NH3 plasma-treated spin-on low-k material was used as a dielectric layer for Cu metalization. After NH3 plasma treatment for 10 min, the low dielectric constant films can prevent ashing damage without changing their original dielectric constant. An extra advantage of blocking copper diffusion was achieved after NH3 plasma treatment. The improvement of low dielectric constant films was due to an oxynitride film formed on the surface of low dielectric constant film. This oxynitride film also prevents the Cu diffusion/migration into the underlying dielectric and plays a role of passive diffusion barriers.
URI: http://hdl.handle.net/11536/29276
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 11
起始頁: 6663
結束頁: 6667
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