Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment

標題:	Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment
作者:	Chang, TC Mor, YS Liu, PT Tsai, TM Chen, CW Sze, SM Mei, YJ 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	methylsilsesquioxane;dielectric constant;boron implantation
公開日期:	1-十一月-2001
摘要:	The organic silsesquioxane, methylsilsesquioxane (MSQ), exhibits a low dielectric constant because of its lower film density compared with thermal oxide. In this study, boron implantation treatment is investigated in order to improve the quality of MSQ. The small size of boron atoms do not damage the chemical bonding of the MSQ film. In addition, the formation of densified surfaces after boron implantation can reduce the probability of moisture uptake into the MSQ. Therefore, the leakage current of MSQ film is significantly decreased and the low-k properties of MSQ film can be maintained. (C) 2001 Elsevier Science B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/S0040-6090(01)01331-1 http://hdl.handle.net/11536/29282
ISSN:	0040-6090
DOI:	10.1016/S0040-6090(01)01331-1
期刊:	THIN SOLID FILMS
Volume:	398
Issue:
起始頁:	637
結束頁:	640
顯示於類別：	會議論文

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