1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorSun, CLen_US
dc.contributor.authorChen, SYen_US
dc.contributor.authorYang, MYen_US
dc.contributor.authorChin, Aen_US
dc.date.accessioned2014-12-08T15:43:18Z-
dc.date.available2014-12-08T15:43:18Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1409398en_US
dc.identifier.urihttp://hdl.handle.net/11536/29306-
dc.description.abstractWe have fabricated Pb(Zr0.53Ti0.47)O-3 on Pt and Pb(Zr0.53Ti0.47)O-3 on 4 nm Al2O3/Si substrates. Although Pb(Zr0.53Ti0.47)O-3 on Pt has a larger dielectric constant and grain size than those on Al2O3/Si, the Pb(Zr0.53Ti0.47)O-3 thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of similar to3.6 V. Moreover, the leakage current density of Pb(Zr0.53Ti0.47)O-3 on Al2O3/Si at -10 V is nearly three orders of magnitude lower than that of Pb(Zr0.53Ti0.47)O-3 on Pt. The comparable memory characteristics and the lower leakage current of Pb(Zr0.53Ti0.47)O-3 on Al2O3/Si are important for continuous scaling down the ferroelectric memory. (C) 2001 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of Pb(Zr0.53Ti0.47)O-3 on metal and Al2O3/Si substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1409398en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume148en_US
dc.citation.issue11en_US
dc.citation.spageF203en_US
dc.citation.epageF206en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000171653100037-
dc.citation.woscount8-
顯示於類別：期刊論文


文件中的檔案：

  1. 000171653100037.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...