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dc.contributor.authorLin, YHen_US
dc.contributor.authorPan, FMen_US
dc.contributor.authorLiao, YCen_US
dc.contributor.authorChen, YCen_US
dc.contributor.authorHsieh, IJen_US
dc.contributor.authorChin, Aen_US
dc.date.accessioned2014-12-08T15:43:18Z-
dc.date.available2014-12-08T15:43:18Z-
dc.date.issued2001-11-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1407834en_US
dc.identifier.urihttp://hdl.handle.net/11536/29307-
dc.description.abstractWe have studied the effect of Cu contamination in oxynitride gate dielectrics. Compared to thermal SiO2 with a physical thickness of 3-5 nm, the oxynitride shows a much improved Cu contamination resistance. Furthermore, the Cu contamination resistance increases with increasing nitrogen content. The mechanism of improved gate dielectric resistance to Cu is due to the strong diffusion barrier properties of oxynitride as observed by secondary ion mass spectroscopy. (C) 2001 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleCu contamination effect in oxynitride gate dielectricsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1407834en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume148en_US
dc.citation.issue11en_US
dc.citation.spageG627en_US
dc.citation.epageG629en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000171653100044-
dc.citation.woscount7-
Appears in Collections:Articles


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