Cu contamination effect in oxynitride gate dielectrics

doi:10.1149/1.1407834

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, YH	en_US
dc.contributor.author	Pan, FM	en_US
dc.contributor.author	Liao, YC	en_US
dc.contributor.author	Chen, YC	en_US
dc.contributor.author	Hsieh, IJ	en_US
dc.contributor.author	Chin, A	en_US
dc.date.accessioned	2014-12-08T15:43:18Z	-
dc.date.available	2014-12-08T15:43:18Z	-
dc.date.issued	2001-11-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.1407834	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29307	-
dc.description.abstract	We have studied the effect of Cu contamination in oxynitride gate dielectrics. Compared to thermal SiO2 with a physical thickness of 3-5 nm, the oxynitride shows a much improved Cu contamination resistance. Furthermore, the Cu contamination resistance increases with increasing nitrogen content. The mechanism of improved gate dielectric resistance to Cu is due to the strong diffusion barrier properties of oxynitride as observed by secondary ion mass spectroscopy. (C) 2001 The Electrochemical Society.	en_US
dc.language.iso	en_US	en_US
dc.title	Cu contamination effect in oxynitride gate dielectrics	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.1407834	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	148	en_US
dc.citation.issue	11	en_US
dc.citation.spage	G627	en_US
dc.citation.epage	G629	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000171653100044	-
dc.citation.woscount	7	-
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