Diamond nucleation on Cu by using MPCVD with a biasing pretreatment

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DC 欄位	值	語言
dc.contributor.author	Chuang, KL	en_US
dc.contributor.author	Chang, L	en_US
dc.contributor.author	Lu, CA	en_US
dc.date.accessioned	2014-12-08T15:43:18Z	-
dc.date.available	2014-12-08T15:43:18Z	-
dc.date.issued	2001-11-01	en_US
dc.identifier.issn	0254-0584	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0254-0584(01)00431-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29315	-
dc.description.abstract	Bias enhanced nucleation of diamond on polycrystalline Cu substrates has been investigated. With CH4 concentration increased, the nucleation density is increased and saturated at 10% CH4, but the quality of diamond is decreased. Bias voltages also play an important role on the nucleation of diamond. It is found that the nucleation density is highest when the voltage was set at -250 V. (C) 2001 Elsevier Science B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	nucleation	en_US
dc.subject	plasma	en_US
dc.subject	chemical vapor deposition	en_US
dc.title	Diamond nucleation on Cu by using MPCVD with a biasing pretreatment	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/S0254-0584(01)00431-X	en_US
dc.identifier.journal	MATERIALS CHEMISTRY AND PHYSICS	en_US
dc.citation.volume	72	en_US
dc.citation.issue	2	en_US
dc.citation.spage	176	en_US
dc.citation.epage	180	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000171822100016	-
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