標題: INFLUENCE OF SINTERING PROFILE ON THE RESISTIVITY OF LOW-CURIE-POINT PTCR CERAMICS
作者: LU, YY
LAI, CH
TSENG, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Aug-1993
摘要: The influence of sintering profile, with emphasis on the effect of soaking treatment and cooling rate, on the resistivity of low-Curie-point positive temperature coefficient of resistivity (PTCR) ceramics has been investigated. Soaking treatment at 1200-degrees-C or slower cooling rate were found to result in an increase in the room-temperature and maximum values of resistivity in the resistivity-temperature characteristics. The surface acceptor density (N(s)), whose value was extracted from the capacitance-voltage measurement, was found to increase with soaking treatment at 1200-degrees-C or slower cooling rate. From derivations based on the Heywang-Jonker model, higher room-temperature and maximum resistivities are expected to occur as a result of increasing N(s), as confirmed by the experimental data.
URI: http://hdl.handle.net/11536/2933
ISSN: 0167-577X
期刊: MATERIALS LETTERS
Volume: 17
Issue: 3-4
起始頁: 141
結束頁: 145
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