標題: | INFLUENCE OF SINTERING PROFILE ON THE RESISTIVITY OF LOW-CURIE-POINT PTCR CERAMICS |
作者: | LU, YY LAI, CH TSENG, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Aug-1993 |
摘要: | The influence of sintering profile, with emphasis on the effect of soaking treatment and cooling rate, on the resistivity of low-Curie-point positive temperature coefficient of resistivity (PTCR) ceramics has been investigated. Soaking treatment at 1200-degrees-C or slower cooling rate were found to result in an increase in the room-temperature and maximum values of resistivity in the resistivity-temperature characteristics. The surface acceptor density (N(s)), whose value was extracted from the capacitance-voltage measurement, was found to increase with soaking treatment at 1200-degrees-C or slower cooling rate. From derivations based on the Heywang-Jonker model, higher room-temperature and maximum resistivities are expected to occur as a result of increasing N(s), as confirmed by the experimental data. |
URI: | http://hdl.handle.net/11536/2933 |
ISSN: | 0167-577X |
期刊: | MATERIALS LETTERS |
Volume: | 17 |
Issue: | 3-4 |
起始頁: | 141 |
結束頁: | 145 |
Appears in Collections: | Articles |