標題: Active circuit's under wire bonding I/O, pads in 0.13 mu m eight-level Cu metal, FSG low-K inter-metal dielectric CMOS technology(+)
作者: Chou, KY
Chen, MJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: aluminum metal film;copper metal;fluorinated silicate glass;I/O bond pad;inter-metal dielectric;low-k;ring oscillator
公開日期: 1-十月-2001
摘要: Active circuits in terms of ring oscillator are moved to the place under the wire bonding pads in 0.13 mum fall eight-level copper metal complementary metal-oxide-semiconductor process with fluorinated silicate glass low-k inter-metal dielectric. The bond pad with the 12 K Angstrom thick aluminum metal film. as a bonding mechanical stress buffer layer is deposited on the topmost copper metal layer. No noticeable degradations in gate delay or cycle time of ring oscillator are detected in a variety of test structures subjected to bonding mechanical stress and thermal cycling stress. This indicates that the underlying process technology may be reliable and manufacturable in placing active circuits under the bonding pads and thereby the die area utility is recovered fully. More evidence is created from transmission fine pulsing experiments as well as capacitive-coupling experiments.
URI: http://dx.doi.org/10.1109/55.954913
http://hdl.handle.net/11536/29357
ISSN: 0741-3106
DOI: 10.1109/55.954913
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 22
Issue: 10
起始頁: 466
結束頁: 468
顯示於類別:期刊論文


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