ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, SL	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:04:26Z	-
dc.date.available	2014-12-08T15:04:26Z	-
dc.date.issued	1993-07-05	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.109738	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2938	-
dc.description.abstract	This letter reports a stacked nitride/microcrystalline-silicon/oxide/silicon structure, which exhibits a higher electron injection efficiency, a less electron trapping rate, and a larger charge to breakdown than the normal oxide. Besides, the room-temperature resonant tunneling effect is also observed for this structure.	en_US
dc.language.iso	en_US	en_US
dc.title	ELECTRICAL CHARACTERISTICS OF A STACKED NITRIDE MICROCRYSTALLINE-SILICON OXIDE SILICON STRUCTURE	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.109738	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	63	en_US
dc.citation.issue	1	en_US
dc.citation.spage	24	en_US
dc.citation.epage	26	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993LK40600009	-
dc.citation.woscount	4	-
顯示於類別：	期刊論文