标题: Ferroelectric characteristics of oriented Pb(Zr1-xTix)O-3 films
作者: Chen, SY
Sun, CL
材料科学与工程学系
Department of Materials Science and Engineering
公开日期: 15-九月-2001
摘要: Pb1.2Zr1-xTix)O-3 (PZT) films with a variety of compositions were prepared by spin coating on Pt/Ti/SiO2/Si substrate with sol-gel processing. The roles of composition (phase) and orientation in ferroelectric properties of PZT films have been determined. The Zr-rich PZT films with (111)-oriented PZT films have a higher remanent polarization but also show a higher fatigue rate as compared to (100)-oriented films in both Zr-rich(65/35) and Ti-rich(35/65) PZT compositions. The lower fatigue rate of (100)-oriented film can be attributed to its easier reversible domain-wall motions compared to (111)-oriented PZT films due to the absence of internal field stress and less dependence on electrical field. A mode based on domain-wall contribution instead of film-electrode interface is favored to elucidate the role of orientation in fatigue characteristics of PZT films. (C) 2001 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1394159
http://hdl.handle.net/11536/29393
ISSN: 0021-8979
DOI: 10.1063/1.1394159
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 90
Issue: 6
起始页: 2970
结束页: 2974
显示于类别:Articles


文件中的档案:

  1. 000170647500053.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.