标题: | Ferroelectric characteristics of oriented Pb(Zr1-xTix)O-3 films |
作者: | Chen, SY Sun, CL 材料科学与工程学系 Department of Materials Science and Engineering |
公开日期: | 15-九月-2001 |
摘要: | Pb1.2Zr1-xTix)O-3 (PZT) films with a variety of compositions were prepared by spin coating on Pt/Ti/SiO2/Si substrate with sol-gel processing. The roles of composition (phase) and orientation in ferroelectric properties of PZT films have been determined. The Zr-rich PZT films with (111)-oriented PZT films have a higher remanent polarization but also show a higher fatigue rate as compared to (100)-oriented films in both Zr-rich(65/35) and Ti-rich(35/65) PZT compositions. The lower fatigue rate of (100)-oriented film can be attributed to its easier reversible domain-wall motions compared to (111)-oriented PZT films due to the absence of internal field stress and less dependence on electrical field. A mode based on domain-wall contribution instead of film-electrode interface is favored to elucidate the role of orientation in fatigue characteristics of PZT films. (C) 2001 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1394159 http://hdl.handle.net/11536/29393 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.1394159 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 90 |
Issue: | 6 |
起始页: | 2970 |
结束页: | 2974 |
显示于类别: | Articles |
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