標題: Influence of barrier growth temperature on the properties of InGaN/GaN quantum Well
作者: Wen, TC
Lee, WI
電子物理學系
友訊交大聯合研發中心
Department of Electrophysics
D Link NCTU Joint Res Ctr
關鍵字: InGaN/GaN multiple quantum well;barrier growth temperature;strain
公開日期: 1-九月-2001
摘要: In this study we investigate the effect of barrier growth temperature on the properties of InGaN/GaN multiple quantum wells. Double-crystal X-ray diffraction of MQW structures indicates that increasing the barrier growth temperature will reduce the well thickness. However, the photoluminescence peak wavelength shift is greater than the change of in the effective bandgap due to the reduction of well width. In addition to the reduction of well width, the determination of the origin of the significant blue shift in the photoluminescence peak wavelength should also take the strain effect into account.
URI: http://dx.doi.org/10.1143/JJAP.40.5302
http://hdl.handle.net/11536/29413
ISSN: 0021-4922
DOI: 10.1143/JJAP.40.5302
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 9A
起始頁: 5302
結束頁: 5303
顯示於類別:期刊論文


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