標題: | Influence of barrier growth temperature on the properties of InGaN/GaN quantum Well |
作者: | Wen, TC Lee, WI 電子物理學系 友訊交大聯合研發中心 Department of Electrophysics D Link NCTU Joint Res Ctr |
關鍵字: | InGaN/GaN multiple quantum well;barrier growth temperature;strain |
公開日期: | 1-九月-2001 |
摘要: | In this study we investigate the effect of barrier growth temperature on the properties of InGaN/GaN multiple quantum wells. Double-crystal X-ray diffraction of MQW structures indicates that increasing the barrier growth temperature will reduce the well thickness. However, the photoluminescence peak wavelength shift is greater than the change of in the effective bandgap due to the reduction of well width. In addition to the reduction of well width, the determination of the origin of the significant blue shift in the photoluminescence peak wavelength should also take the strain effect into account. |
URI: | http://dx.doi.org/10.1143/JJAP.40.5302 http://hdl.handle.net/11536/29413 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.40.5302 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 40 |
Issue: | 9A |
起始頁: | 5302 |
結束頁: | 5303 |
顯示於類別: | 期刊論文 |