標題: Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells
作者: Wen, TC
Lee, SC
Lee, WI
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
關鍵字: InGaN/GaN multiple quantum well;barrier growth temperature;strain;phase separation;phase separation enhance layer;multi-peak
公開日期: 2001
摘要: This study invests the effect of barrier growth temperature on the properties of InGaN/GaN MQW. Increase the growth temperature will reduce the well thickness and result in the blue shift of the PL peak. This blue shift in FL peak wavelength may be resulted from the stain occure during varying barrier growth temperature rather than only the reduce the well width. Moreover, we introduce a phase separation enhance layer into InGaN/GaN MQW. This layer join with the variation of barrier growth temperature will enhance the phase separation in InGaN/GaN MQW. There are two peaks clearly revealed in RT PL spectra. The higher energy peak might originate the InGaN quasi-wetting layer on the GaN barrier surface. The other one is interpreted of localize state at potential fluctuation owning to phase separation.
URI: http://hdl.handle.net/11536/19002
http://dx.doi.org/10.1117/12.426844
ISBN: 0-8194-3956-8
ISSN: 0277-786X
DOI: 10.1117/12.426844
期刊: LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V
Volume: 4278
起始頁: 141
結束頁: 149
顯示於類別:會議論文


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