標題: | Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells |
作者: | Kuo, Cheng-Huang Fu, Yi Keng Chang, L. C. Chen, Yu An 照明與能源光電研究所 Institute of Lighting and Energy Photonics |
關鍵字: | InN/GaN;efficiency droop;In rich;localization effect |
公開日期: | 1-四月-2014 |
摘要: | Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm(2), the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer. |
URI: | http://dx.doi.org/10.1109/JQE.2014.2306997 http://hdl.handle.net/11536/23965 |
ISSN: | 0018-9197 |
DOI: | 10.1109/JQE.2014.2306997 |
期刊: | IEEE JOURNAL OF QUANTUM ELECTRONICS |
Volume: | 50 |
Issue: | 4 |
起始頁: | 255 |
結束頁: | 260 |
顯示於類別: | 期刊論文 |