完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | FENG, MS | en_US |
dc.contributor.author | LIN, KC | en_US |
dc.contributor.author | WU, CC | en_US |
dc.contributor.author | CHEN, HD | en_US |
dc.contributor.author | SHANG, YC | en_US |
dc.date.accessioned | 2014-12-08T15:04:26Z | - |
dc.date.available | 2014-12-08T15:04:26Z | - |
dc.date.issued | 1993-07-01 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.355229 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2942 | - |
dc.description.abstract | We have successfully grown In0.49Ga0.51P/GaAs heterostructures and made InGaP-based high electron mobility transistors (HEMTs) by low-pressure metalorganic chemical vapor deposition. We have found the epitaxial layer of InGaP with a Hall mobility of 4073 cm2/V s (300 K) and the photoluminescence full width at half-maximum of 1 meV (4.2 K) for GaAs, 12 meV (4.2 K) for In0.49Ga0.51P. Zinc-induced disordering phenomenon was examined by transmission electron microscope. By Shubnikov-de Haas measurement, we demonstrated the existence of a two-dimensional electron gas in InGaP/GaAs heterojunctions. The sheet carrier concentration of 2DEG is around 8.8 X 10(11) cm-2 at 1.5 K. A HEMT device with 1 mum X 40 mum gate (pattern) shows an extrinsic transconductance of 65.5 mS/mm and an intrinsic transconductance of 266 mS/mm at 300 K. | en_US |
dc.language.iso | en_US | en_US |
dc.title | IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.355229 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 74 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 672 | en_US |
dc.citation.epage | 678 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:A1993LK46900100 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |