標題: | Structure of high resistivity GaAs film grown by low-temperature metalorganic chemical vapor deposition |
作者: | Chen, WC Chang, CS Chan, SH 光電工程學系 Department of Photonics |
公開日期: | 18-十一月-1996 |
摘要: | The structure of a low-temperature GaAs layer grown by low-pressure metalorganic chemical vapor deposition with precursors of triethylgallium and arsine is reported. Dense particles containing Ga clusters are found in a high resistivity GaAs film grown at 420 degrees C, The size and concentration of particles are about 800-1000 nm and 7X10(11) cm(-3), respectively. (C) 1996 American Institute of Physics. |
URI: | http://hdl.handle.net/11536/924 |
ISSN: | 0003-6951 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 69 |
Issue: | 21 |
起始頁: | 3239 |
結束頁: | 3241 |
顯示於類別: | 期刊論文 |