標題: Structure of high resistivity GaAs film grown by low-temperature metalorganic chemical vapor deposition
作者: Chen, WC
Chang, CS
Chan, SH
光電工程學系
Department of Photonics
公開日期: 18-十一月-1996
摘要: The structure of a low-temperature GaAs layer grown by low-pressure metalorganic chemical vapor deposition with precursors of triethylgallium and arsine is reported. Dense particles containing Ga clusters are found in a high resistivity GaAs film grown at 420 degrees C, The size and concentration of particles are about 800-1000 nm and 7X10(11) cm(-3), respectively. (C) 1996 American Institute of Physics.
URI: http://hdl.handle.net/11536/924
ISSN: 0003-6951
期刊: APPLIED PHYSICS LETTERS
Volume: 69
Issue: 21
起始頁: 3239
結束頁: 3241
顯示於類別:期刊論文