The correlation between the chemical compositions and optical properties of TiSixNy as an embedded layer for AttPSM in 193 nm

Abstract

We reported that the optical and physical properties of TiSixNy thin films formed by sputtering are suitable to be used as an embedded layer in 193 nm. The TiSixNy films were deposited under DC power of Ti target 170-220 W, RF power of Si target 50-110 W, Ar 50 sccm and N-2 3-7 sccm. The increasing of the atomic percentage of nitrogen in TiSixNy has a good agreement with its n and k. With the formation of Si3N4 and TiN structures, the TiSixNy thin film's n started to increase, k to decrease. After the saturation of formations of Si3N4 and TiN structures, the Si and Ti states started to show up, resulted this thin film's n to decrease, and k to increase. The n and k values were calculated by our modified R-T (reflectance-transmittance) method. Controlling a thin film's compositions during sputtering could allow the manipulation of its n and k. (C) 2001 Elsevier Science B.V. All rights reserved.