完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCheng, HCen_US
dc.contributor.authorChen, KJen_US
dc.contributor.authorHong, WKen_US
dc.contributor.authorTantair, FGen_US
dc.contributor.authorLin, CPen_US
dc.contributor.authorChen, KHen_US
dc.contributor.authorChen, LCen_US
dc.date.accessioned2014-12-08T15:43:37Z-
dc.date.available2014-12-08T15:43:37Z-
dc.date.issued2001-08-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1381349en_US
dc.identifier.urihttp://hdl.handle.net/11536/29487-
dc.description.abstractBased on selective growth, carbon nanotubes (CNTs) for low turn-on voltage field emission triodes have been grown via microwave plasma-enhanced chemical vapor deposition. The triode devices fabricated with standard integrated circuit process contain 4 x 4 emitting cells with extraction gates and each individual cell is 4 mum in diameter. With the phosphor-coated indium tin oxide glass as the anode away from the CNTs triodes with similar to1 mm above, the triode devices achieved low turn-on gate voltage of 30 V and high emission current density of 0.7 A/cm(2) at 50 V. The results exhibit CNTs for potential application in field emission display. (C) 2001 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleFabrication and characterization of low turn-on voltage carbon nanotube field emission triodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1381349en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume4en_US
dc.citation.issue8en_US
dc.citation.spageH15en_US
dc.citation.epageH17en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000170006800013-
dc.citation.woscount2-
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