標題: Expanding the process window and reducing the optical proximity effect by post-exposure delay
作者: Ku, CY
Shieh, JM
Chiou, TB
Lin, HK
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-2001
摘要: In this investigation, a novel idea had been proposed to expand the process window and reduce the optical proximity effect (OPE) by employing post-exposure delay (PED). Our previous work presented a model to specify the resist linewidth according to PED time based on the neutralization mechanism of organic base and photogenerated acid. Based on the model, the exposure latitude and depth of focus can be extended for various pattern sizes by applying PED on linewidth broadening. Moreover, the dense-iso critical dimension bias, which is caused by OPE, can also be reduced when PED is performed. (C) 2001 The Electrochemical Society. [DOI: 10.1149/1.1383557] All rights reserved.
URI: http://dx.doi.org/10.1149/1.1383557
http://hdl.handle.net/11536/29491
ISSN: 0013-4651
DOI: 10.1149/1.1383557
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 148
Issue: 8
起始頁: G434
結束頁: G438
顯示於類別:期刊論文


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