标题: | Selective copper metallization by electrochemical contact displacement with amorphous silicon film |
作者: | Lee, YP Tsai, MS Hu, TC Dai, BT Feng, MS 材料科学与工程学系 Department of Materials Science and Engineering |
公开日期: | 1-七月-2001 |
摘要: | In this study, we proposed a novel selective Cu metallization method by means of Si chemical mechanical polishing (CMP) and electrochemical Cu contact displacement from a-Si. The galvanic Cu deposition which involves the electrochemical redox reaction between cupric ions and silicon atoms could be carried out at room temperature in the HF aqueous solution. This selective Cu metallization method is promising for overcoming the obstacles in the current damascene process, such as the limitation of depositing comformally Cu seed into high aspect ratio trenches by physical vapor deposition for the following void-free Cu electroplating and nonplanarity issues after multistep CMP, such as Cu dishing and dielectric erosion. (C) 2001 The Electrochemical Society. |
URI: | http://dx.doi.org/10.1149/1.1374036 http://hdl.handle.net/11536/29520 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.1374036 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 4 |
Issue: | 7 |
起始页: | C47 |
结束页: | C49 |
显示于类别: | Articles |