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dc.contributor.authorLai, CHen_US
dc.contributor.authorLin, CCen_US
dc.contributor.authorChen, BMen_US
dc.contributor.authorShieh, HPDen_US
dc.contributor.authorChang, CRen_US
dc.date.accessioned2014-12-08T15:43:45Z-
dc.date.available2014-12-08T15:43:45Z-
dc.date.issued2001-06-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1357112en_US
dc.identifier.urihttp://hdl.handle.net/11536/29575-
dc.description.abstractSpin valves composed of ferrimagnetic/Cu/ferrimagnetic layers were fabricated with the magnetization perpendicular to the film planes. By changing the composition of ferrimagnetic layers, both negative and positive giant magnetoresistance (GMR) can be observed in ferrimagnetic spin valves. For samples consisting of both transition-metal (TM-) rich TbFeCo and GdFeCo, negative GMR values were obtained. Due to the high resistivity of amorphous ferrimagnetic films, the shunting effect of Cu led to relatively small MR ratio. The negative MR effect was 1% for 1.7 nm Cu. For spin valves consisting of rare-earth (RE-)rich TbFeCo and TM-rich GdFeCo, positive GMR values were observed. A thin layer of Co was inserted between RE-rich TbFeCo and Cu to manipulate the sign of GMR. (C) 2001 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titlePositive giant magnetoresistance in ferrimagnetic/Cu/ferrimagnetic filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1063/1.1357112en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume89en_US
dc.citation.issue11en_US
dc.citation.spage7124en_US
dc.citation.epage7126en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000169151700173-
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