完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, HT | en_US |
dc.contributor.author | Chen, MJ | en_US |
dc.contributor.author | Su, CW | en_US |
dc.contributor.author | Chen, JH | en_US |
dc.contributor.author | Hou, CS | en_US |
dc.contributor.author | Liang, MS | en_US |
dc.date.accessioned | 2014-12-08T15:43:46Z | - |
dc.date.available | 2014-12-08T15:43:46Z | - |
dc.date.issued | 2001-06-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/16.925260 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29588 | - |
dc.description.abstract | A trap generation statistical model with the trap sphere radius r as parameter has been newly formulated in closed-form for intrinsic breakdown of ultrathin oxides and, by incorporating the trap filling fraction p as the secondary parameter, can be practically useful in a manufacturing process. Experimental reproduction for different oxide thicknesses and areas has been achieved through the model. A certain criterion has readily been drawn from the model, with which the ultimate thickness limit for breakdown can be set. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A trap generation closed-form statistical model for intrinsic oxide breakdown | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/16.925260 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 48 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 1275 | en_US |
dc.citation.epage | 1277 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000169044500040 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |