标题: | High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer |
作者: | Wang, SY Lin, SD Wu, HW Lee, CP 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | quantum dot;intersubband;infrared detector |
公开日期: | 1-六月-2001 |
摘要: | Low dark current InAs/GaAs quantum dot infrared photodetector (QDIP) is demonstrated. The dark current reduced for over three orders of magnitude by introducing a thin AlGaAs current blocking layer. This thin AlGaAs can reduce the dark current much more than the response signal. The responsivity at 0.5 V is 0.08 A/W with peak at 6.5 mum and the corresponding detectivity about 2.5 x 10(9) cm Hz(1/2/W1/2). It is the highest detectivity reported for QDIP at 77 K. (C) 2001 Published by Elsevier Science B.V. |
URI: | http://dx.doi.org/10.1016/S1350-4495(01)00108-6 http://hdl.handle.net/11536/29592 |
ISSN: | 1350-4495 |
DOI: | 10.1016/S1350-4495(01)00108-6 |
期刊: | INFRARED PHYSICS & TECHNOLOGY |
Volume: | 42 |
Issue: | 3-5 |
起始页: | 473 |
结束页: | 477 |
显示于类别: | Conferences Paper |
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