标题: High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer
作者: Wang, SY
Lin, SD
Wu, HW
Lee, CP
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: quantum dot;intersubband;infrared detector
公开日期: 1-六月-2001
摘要: Low dark current InAs/GaAs quantum dot infrared photodetector (QDIP) is demonstrated. The dark current reduced for over three orders of magnitude by introducing a thin AlGaAs current blocking layer. This thin AlGaAs can reduce the dark current much more than the response signal. The responsivity at 0.5 V is 0.08 A/W with peak at 6.5 mum and the corresponding detectivity about 2.5 x 10(9) cm Hz(1/2/W1/2). It is the highest detectivity reported for QDIP at 77 K. (C) 2001 Published by Elsevier Science B.V.
URI: http://dx.doi.org/10.1016/S1350-4495(01)00108-6
http://hdl.handle.net/11536/29592
ISSN: 1350-4495
DOI: 10.1016/S1350-4495(01)00108-6
期刊: INFRARED PHYSICS & TECHNOLOGY
Volume: 42
Issue: 3-5
起始页: 473
结束页: 477
显示于类别:Conferences Paper


文件中的档案:

  1. 000169398200042.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.