标题: | High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure |
作者: | Lin, CW Cheng, LJ Lu, YL Lee, YS Cheng, HC 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 1-六月-2001 |
摘要: | High-performance low-temperature poly-Si (LTPS) thin-film transistors (TFTs) have been fabricated by excimer laser crystallization (ELC) with recessed-channel (RC) structure, The TFTs made by this method possessed large longitudinal grains in the channel regions, therefore, they exhibited better electrical char acteristics as compared with the conventional ones. The average field-effect mobility above 300 cm(2)/V-s and on/off current ratio higher than 10(9) were achieved in these RC-structure devices, In addition, since grain growth could be artificially controlled by this method, the device electrical characteristics were less sensitive to laser energy density variation, and therefore the uniformity of device performance could be improved. |
URI: | http://dx.doi.org/10.1109/55.924838 http://hdl.handle.net/11536/29610 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.924838 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 22 |
Issue: | 6 |
起始页: | 269 |
结束页: | 271 |
显示于类别: | Articles |
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