Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs

Title:	Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs
Authors:	Li, Yiming Cheng, Hui-Wen Chiu, Yung-Yueh 傳播研究所電機工程學系 Institute of Communication Studies Department of Electrical and Computer Engineering
Keywords:	High-kappa/metal gate;Interface trap;Random dopant;Threshold voltage fluctuation;Interface trap fluctuation;Random dopant fluctuation;Combination of interface trap and random;dopant fluctuations
Issue Date:	1-Jul-2011
Abstract:	In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO(2) film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/ off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated. (C) 2011 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.mee.2011.03.040 http://hdl.handle.net/11536/29620
ISSN:	0167-9317
DOI:	10.1016/j.mee.2011.03.040
Journal:	MICROELECTRONIC ENGINEERING
Volume:	88
Issue:	7
Begin Page:	1269
End Page:	1271
Appears in Collections:	Conferences Paper

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