Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs

doi:10.1016/j.mee.2011.03.040

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DC 欄位	值	語言
dc.contributor.author	Li, Yiming	en_US
dc.contributor.author	Cheng, Hui-Wen	en_US
dc.contributor.author	Chiu, Yung-Yueh	en_US
dc.date.accessioned	2014-12-08T15:43:49Z	-
dc.date.available	2014-12-08T15:43:49Z	-
dc.date.issued	2011-07-01	en_US
dc.identifier.issn	0167-9317	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.mee.2011.03.040	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29620	-
dc.description.abstract	In this work, we study the effect of interface traps (ITs) and random dopants (RDs) on characteristics of 16-nm MOSFETs. Totally random generated devices with 2D ITs between the interface of silicon and HfO(2) film as well as 3D RDs inside the silicon channel are simulated. Fluctuations of threshold voltage and on/ off state current for devices with different EOT of insulator film are analyzed and discussed. The results of this study indicate ITs and RDs statistically correlate to each other and RDs govern device variability, compared with the influence of ITs. Notably, the position of ITs and RDs induces rather different fluctuation in spite of the same number of ITs and RDs are investigated. (C) 2011 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	High-kappa/metal gate	en_US
dc.subject	Interface trap	en_US
dc.subject	Random dopant	en_US
dc.subject	Threshold voltage fluctuation	en_US
dc.subject	Interface trap fluctuation	en_US
dc.subject	Random dopant fluctuation	en_US
dc.subject	Combination of interface trap and random	en_US
dc.subject	dopant fluctuations	en_US
dc.title	Interface traps and random dopants induced characteristic fluctuations in emerging MOSFETs	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/j.mee.2011.03.040	en_US
dc.identifier.journal	MICROELECTRONIC ENGINEERING	en_US
dc.citation.volume	88	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1269	en_US
dc.citation.epage	1271	en_US
dc.contributor.department	傳播研究所	zh_TW
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Institute of Communication Studies	en_US
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000292572700057	-
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