標題: High etching rate of GaN films by KrF excimer laser
作者: Chu, CF
Lee, CK
Yu, CC
Wang, YK
Tasi, JY
Yang, CR
Wang, SC
光電工程學系
Department of Photonics
關鍵字: GaN;KrF excimer laser;environmental conditions;atmosphere pressure;low pressure
公開日期: 22-五月-2001
摘要: A study of laser processing of gallium nitride (GaN) material is reported. A pulsed KrF excimer laser at 248 nm with 20-nsec pulse width and 1 Hz repetition rate is used to etch the GaN film. We establish the material etching parameters under different environmental conditions. By changing the pulsed energy at constant pulse numbers, ablation of GaN surface was observed at threshold laser fluence about 0.3 J cm(-2). Laser etching increase with reducing environment pressure. Al 1.0 J cm (-2) laser fluence, the etching fate is about 35 nm per pulse at atmosphere pressure and increases to 60 nm per pulse at low pressure. The etched depth also increases with increasing laser fluence. The surface morphology of the etched surface was also investigated. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0921-5107(00)00696-6
http://hdl.handle.net/11536/29639
ISSN: 0921-5107
DOI: 10.1016/S0921-5107(00)00696-6
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 82
Issue: 1-3
起始頁: 42
結束頁: 44
顯示於類別:會議論文


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