Investigation of beryllium implanted P-type GaN

doi:10.1016/S0921-5107(00)00751-0

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DC 欄位	值	語言
dc.contributor.author	Yu, CC	en_US
dc.contributor.author	Chu, CF	en_US
dc.contributor.author	Tsai, JY	en_US
dc.contributor.author	Wang, SC	en_US
dc.date.accessioned	2014-12-08T15:43:50Z	-
dc.date.available	2014-12-08T15:43:50Z	-
dc.date.issued	2001-05-22	en_US
dc.identifier.issn	0921-5107	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0921-5107(00)00751-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29640	-
dc.description.abstract	We report the preliminary results of beryllium implanted into P-type GaN and the effects on the characteristic of Mg-doped P-GaN. These samples were implanted with Be ions were implanted with two different energies of 50 and 150 keV at two different doses of similar to 10(13) and 10(14) cm(-2) at room temperature. Surface morphology and photoluminescence measurements are presented. (C) 2001 Elsevier Science B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	beryllium	en_US
dc.subject	implant	en_US
dc.subject	GaN	en_US
dc.subject	photoluminescence	en_US
dc.title	Investigation of beryllium implanted P-type GaN	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/S0921-5107(00)00751-0	en_US
dc.identifier.journal	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY	en_US
dc.citation.volume	82	en_US
dc.citation.issue	1-3	en_US
dc.citation.spage	82	en_US
dc.citation.epage	84	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000168618700024	-
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