Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lo, Hsiang-Yu | en_US |
dc.contributor.author | Li, Yiming | en_US |
dc.contributor.author | Tsai, Chih-Hao | en_US |
dc.contributor.author | Pan, Fu-Ming | en_US |
dc.date.accessioned | 2014-12-08T15:43:50Z | - |
dc.date.available | 2014-12-08T15:43:50Z | - |
dc.date.issued | 2008-04-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.47.2972 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29643 | - |
dc.description.abstract | We study the field emission (FE) property of a nanometer-scale gap structure in a palladium strip, which was fabricated by hydrogen absorption under high-pressure treatment. A vigorous cracking process could be accompanied by extensive atomic migration during the hydrogen treatment. A three-dimensional finite-difference time-domain particle-in-cell method is adopted to simulate the electron emission in a surface-conduction electron-emitter display (SED) device. Examinations of conducting characteristics, FE efficiency, the local field around the emitter, and the current density on the anode plate with one FE emitter are conducted. The image of a light spot is successfully produced on a phosphor plate, which implies that the explored electrode with nanometer separation possesses a potential SED application. Experimental observation and numerical simulation show that the proposed structure can be used as a surface conduction electron emitter and has a high FE efficiency with low turn-on voltage and a different electron emission mechanism. This study benefits the advanced SED design for a new type of electron source. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | nanometer-scale gap | en_US |
dc.subject | high-pressure hydrogen absorption treatment | en_US |
dc.subject | three-dimensional finite-difference time-domain particle-in-cell method | en_US |
dc.subject | surface conduction electron-emitter display | en_US |
dc.subject | conducting characteristics | en_US |
dc.subject | field emission efficiency | en_US |
dc.subject | current density distribution | en_US |
dc.title | Analysis of field emission of fabricated nanogap in Pd strips for surface conduction electron-emitter displays | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1143/JJAP.47.2972 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 47 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 2972 | en_US |
dc.citation.epage | 2976 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電信工程研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Institute of Communications Engineering | en_US |
dc.identifier.wosnumber | WOS:000255449100141 | - |
Appears in Collections: | Conferences Paper |
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