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dc.contributor.authorLo, Hsiang-Yuen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorTsai, Chih-Haoen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.date.accessioned2014-12-08T15:43:50Z-
dc.date.available2014-12-08T15:43:50Z-
dc.date.issued2008-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.47.2972en_US
dc.identifier.urihttp://hdl.handle.net/11536/29643-
dc.description.abstractWe study the field emission (FE) property of a nanometer-scale gap structure in a palladium strip, which was fabricated by hydrogen absorption under high-pressure treatment. A vigorous cracking process could be accompanied by extensive atomic migration during the hydrogen treatment. A three-dimensional finite-difference time-domain particle-in-cell method is adopted to simulate the electron emission in a surface-conduction electron-emitter display (SED) device. Examinations of conducting characteristics, FE efficiency, the local field around the emitter, and the current density on the anode plate with one FE emitter are conducted. The image of a light spot is successfully produced on a phosphor plate, which implies that the explored electrode with nanometer separation possesses a potential SED application. Experimental observation and numerical simulation show that the proposed structure can be used as a surface conduction electron emitter and has a high FE efficiency with low turn-on voltage and a different electron emission mechanism. This study benefits the advanced SED design for a new type of electron source.en_US
dc.language.isoen_USen_US
dc.subjectnanometer-scale gapen_US
dc.subjecthigh-pressure hydrogen absorption treatmenten_US
dc.subjectthree-dimensional finite-difference time-domain particle-in-cell methoden_US
dc.subjectsurface conduction electron-emitter displayen_US
dc.subjectconducting characteristicsen_US
dc.subjectfield emission efficiencyen_US
dc.subjectcurrent density distributionen_US
dc.titleAnalysis of field emission of fabricated nanogap in Pd strips for surface conduction electron-emitter displaysen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.47.2972en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume47en_US
dc.citation.issue4en_US
dc.citation.spage2972en_US
dc.citation.epage2976en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000255449100141-
Appears in Collections:Conferences Paper


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