完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wen, TC | en_US |
dc.contributor.author | Lee, SC | en_US |
dc.contributor.author | Lee, WI | en_US |
dc.contributor.author | Chen, TY | en_US |
dc.contributor.author | Chan, SH | en_US |
dc.contributor.author | Tsang, JS | en_US |
dc.date.accessioned | 2014-12-08T15:43:50Z | - |
dc.date.available | 2014-12-08T15:43:50Z | - |
dc.date.issued | 2001-05-15 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.40.L495 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29644 | - |
dc.description.abstract | In this study, we activated p-type GaN in a pure oxygen ambient by rapid thermal annealing. The sheet resistance of p-type GaN was greatly reduced from > 10(7) Omega/square to 7.06 x 10(4) Omega/square after annealing in oxygen ambient at 500 degreesC, The photoluminescence intensity of blue emission increased by one order of magnitude compared to the as-grown sample. Moreover, the sheet resistance of p-type GaN annealed in pure oxygen ambient is lower than that of p-type GaN annealed in nitrogen ambient. The carrier concentrations of the samples annealed in oxygen ambient are higher than those annealed in nitrogen ambient. The better activation of p-type GaN in oxygen ambient is due to the higher activity of oxygen than that of nitrogen. Oxygen would remove hydrogen that passivates Ma atoms by forming H2O at a lower temperature. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | p-type GaN | en_US |
dc.subject | activation | en_US |
dc.subject | rapid thermal annealing | en_US |
dc.subject | oxygen ambient | en_US |
dc.subject | nitrogen ambient | en_US |
dc.subject | Hall measurement | en_US |
dc.subject | photoluminescence | en_US |
dc.subject | hydrogen | en_US |
dc.title | Activation of p-type GaN in a pure oxygen ambient | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.40.L495 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
dc.citation.volume | 40 | en_US |
dc.citation.issue | 5B | en_US |
dc.citation.spage | L495 | en_US |
dc.citation.epage | L497 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
dc.identifier.wosnumber | WOS:000170777800004 | - |
dc.citation.woscount | 13 | - |
顯示於類別: | 期刊論文 |