完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWen, TCen_US
dc.contributor.authorLee, SCen_US
dc.contributor.authorLee, WIen_US
dc.contributor.authorChen, TYen_US
dc.contributor.authorChan, SHen_US
dc.contributor.authorTsang, JSen_US
dc.date.accessioned2014-12-08T15:43:50Z-
dc.date.available2014-12-08T15:43:50Z-
dc.date.issued2001-05-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.40.L495en_US
dc.identifier.urihttp://hdl.handle.net/11536/29644-
dc.description.abstractIn this study, we activated p-type GaN in a pure oxygen ambient by rapid thermal annealing. The sheet resistance of p-type GaN was greatly reduced from > 10(7) Omega/square to 7.06 x 10(4) Omega/square after annealing in oxygen ambient at 500 degreesC, The photoluminescence intensity of blue emission increased by one order of magnitude compared to the as-grown sample. Moreover, the sheet resistance of p-type GaN annealed in pure oxygen ambient is lower than that of p-type GaN annealed in nitrogen ambient. The carrier concentrations of the samples annealed in oxygen ambient are higher than those annealed in nitrogen ambient. The better activation of p-type GaN in oxygen ambient is due to the higher activity of oxygen than that of nitrogen. Oxygen would remove hydrogen that passivates Ma atoms by forming H2O at a lower temperature.en_US
dc.language.isoen_USen_US
dc.subjectp-type GaNen_US
dc.subjectactivationen_US
dc.subjectrapid thermal annealingen_US
dc.subjectoxygen ambienten_US
dc.subjectnitrogen ambienten_US
dc.subjectHall measurementen_US
dc.subjectphotoluminescenceen_US
dc.subjecthydrogenen_US
dc.titleActivation of p-type GaN in a pure oxygen ambienten_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.40.L495en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume40en_US
dc.citation.issue5Ben_US
dc.citation.spageL495en_US
dc.citation.epageL497en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000170777800004-
dc.citation.woscount13-
顯示於類別:期刊論文


文件中的檔案:

  1. 000170777800004.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。