標題: | Properties of Mg activation in thermally treated GaN : Mg films |
作者: | Lin, CF Cheng, HC Chang, CC Chi, GC 電子工程學系及電子研究所 奈米中心 Department of Electronics Engineering and Institute of Electronics Nano Facility Center |
公開日期: | 1-十二月-2000 |
摘要: | The Mg accepters of GaN films are activated as p-type GaN with rapid thermal annealing (RTA) and furnace treatments. The GaN:Mg films are activated successfully by using the RTA system below 1000 degreesC for 1 min. After the RTA treatment, we observed a sharper linewidth and stronger emission intensities from donor to acceptor peaks in the photoluminescence spectra. By comparing the electrical properties of GaN:Mg films at optimum conditions made with RTA (800 degreesC) and furnace (700 degreesC) treatments, we find similar activated hole concentration and a higher hole mobility for GaN:Mg films with RTA treatment at 800 degreesC. A higher bulk resistivity caused by increasing nitrogen vacancies is found at higher temperature and longer time RTA treatments. Faster treatment times and lower temperatures for the GaN:Mg films were achieved with the RTA activation process. (C) 2000 American Institute of Physics. [S0021-8979(00)04120-7]. |
URI: | http://hdl.handle.net/11536/30060 |
ISSN: | 0021-8979 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 88 |
Issue: | 11 |
起始頁: | 6515 |
結束頁: | 6518 |
顯示於類別: | 期刊論文 |