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dc.contributor.authorChang, SCen_US
dc.contributor.authorShieh, JMen_US
dc.contributor.authorLin, KCen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorWang, TCen_US
dc.contributor.authorChen, CFen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorLi, YHen_US
dc.contributor.authorLu, CPen_US
dc.date.accessioned2014-12-08T15:43:54Z-
dc.date.available2014-12-08T15:43:54Z-
dc.date.issued2001-05-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.1368673en_US
dc.identifier.urihttp://hdl.handle.net/11536/29681-
dc.description.abstractThrough elucidating the effects of current density, cupric ion concentration, bath temperature, and air agitation on plating uniformity and filling capability of copper electroplating, the deposition of copper in an acid copper electrolyte will be illustrated to scale down to the sub-0.13 mum features with uniform plating, which is required by chemical mechanical polishing in current damascene techniques. In order to achieve the defect-free filling in sub-0.13 mum vias and trenches, the electrolyte must be composed of proper amounts of cupric ions, sulfuric acid, chloride ions, wetting agent, and filling promoter. The supplied current controlled at a lower current density, agitation acceded to the electroplating process were found as further keys. In the electrolyte, the filling promoter was consisted essentially of thiazole derivatives with benzyl groups and amino-group (-NH2) offering sufficient inhibition on copper depositing and selective inhibition gradient. Moreover, a lower resistivity film and higher filling capability could be obtained by using periodic pulse current plating as compared with direct current plating. (C) 2001 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleInvestigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copperen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.1368673en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume19en_US
dc.citation.issue3en_US
dc.citation.spage767en_US
dc.citation.epage773en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000169366600028-
dc.citation.woscount31-
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