Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, WK | en_US |
dc.contributor.author | Chen, KH | en_US |
dc.contributor.author | Chen, LC | en_US |
dc.contributor.author | Tarntair, FG | en_US |
dc.contributor.author | Chen, KJ | en_US |
dc.contributor.author | Lin, JB | en_US |
dc.contributor.author | Cheng, HC | en_US |
dc.date.accessioned | 2014-12-08T15:43:55Z | - |
dc.date.available | 2014-12-08T15:43:55Z | - |
dc.date.issued | 2001-05-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.40.3468 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29694 | - |
dc.description.abstract | To achieve high emission current density, carbon nanotube triodes have been proposed using recessed oxide as the insulator between the gate and the carbon nanotubes to replace the conventional spacer. An anode current of 10 muA was achieved with a gate voltage of 98 V for a nanotube sample prepared with a growth time of 12 min. Carbon nanotubes synthesized with various growth times were analyzed using a scanning electron microscope and Raman spectroscopy. By increasing the growth time, longer carbon nanotubes were obtained. Effects of the length of the carbon nanotubes on the field emission of the triodes are discussed, Enhanced luminance was obtained as the anode voltage increased from 600V to 1000V. Such carbon nanotube triodes are promising for utilization in future field-emission displays. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | field-emission triodes | en_US |
dc.subject | aligned carbon nanotubes | en_US |
dc.subject | microwave plasma-enhanced chemical vapor deposition | en_US |
dc.title | Fabrication and characterization of carbon nanotube triodes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.40.3468 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 40 | en_US |
dc.citation.issue | 5A | en_US |
dc.citation.spage | 3468 | en_US |
dc.citation.epage | 3473 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000170772000084 | - |
dc.citation.woscount | 14 | - |
Appears in Collections: | Articles |
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