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dc.contributor.authorTarntair, FGen_US
dc.contributor.authorWu, JJen_US
dc.contributor.authorChen, KHen_US
dc.contributor.authorWen, CYen_US
dc.contributor.authorChen, LCen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:44:03Z-
dc.date.available2014-12-08T15:44:03Z-
dc.date.issued2001-03-15en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0257-8972(00)01072-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/29769-
dc.description.abstractThe electron emission characteristics of two-layer structured silicon carbon nitride (SiCN) films, which were composed of amorphous and nanocrystalline phases, were studied. Rutherford backscattering spectroscopy (RBS) was used to determine the composition of the SiCN film. The ratio (Si;C)/N of the SiCN film was kept at approximately 0.75, which is identical to that of Si3N4 him. High resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were used to investigate the bonding structures of the SiCN films. In comparison with silicon nitride films, the turn-on Voltage (for an emission current of 0.01 mA/cm(2)) of the SiCN films was rower and the emission current densities of the SiCN significantly enhanced. The promising emission properties of the SiCN film could be due to the unique two-layer structure wherein nanocrystalline SiCN was grown on top of the amorphous interlayer with sp(2) CN bond in the SiCN film. (C) 2001 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectelectron emissionen_US
dc.subjectSiCNen_US
dc.subjectnanocrystallineen_US
dc.subjecttwo-layer structureen_US
dc.titleField emission properties of two-layer structured SiCN filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0257-8972(00)01072-0en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume137en_US
dc.citation.issue2-3en_US
dc.citation.spage152en_US
dc.citation.epage157en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000167084000006-
dc.citation.woscount19-
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