標題: Field emission from quasi-aligned SiCN nanorods
作者: Tarntair, FG
Wen, CY
Chen, LC
Wu, JJ
Chen, KH
Kuo, PF
Chang, SW
Chen, YF
Hong, WK
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-2000
摘要: We report on the preparation and field emission properties of quasi-aligned silicon carbon nitride (SiCN) nanorods. The SiCN nanorods are formed by using a two-stage growth method wherein the first stage involves formation of a buffer layer containing high density of nanocrystals by electron cyclotron resonance plasma enhanced chemical vapor deposition and the second stage involves using microwave plasma enhanced chemical vapor deposition for high growth rate along a preferred orientation. It should be noted that growth of the SiCN nanorods is self-mediated without the addition of any metal catalyst. Scanning electron microscopy shows that the SiCN nanorods are six-side-rod-shaped single crystals of about 1-1.5 mu m in length and about 20-50 nm in diameter. Energy dispersive x-ray spectrometry shows that the nanorod contains about 26 at. % of Si, 50 at. % of C, and 24 at. % of N. Characteristic current-voltage measurements indicate a low turn-on field of 10 V/mu m. Field emission current density in excess of 4.5 mA/cm(2) has been observed at 36.7 V/mu m. Moreover, SiCN nanorods exhibited rather stable emission current under constant applied voltage. (C) 2000 American Institute of Physics. [S0003-6951(00)01117-7].
URI: http://hdl.handle.net/11536/30527
ISSN: 0003-6951
期刊: APPLIED PHYSICS LETTERS
Volume: 76
Issue: 18
起始頁: 2630
結束頁: +
顯示於類別:期刊論文


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