標題: The reaction of Co and Si1-xGex for MOSFET with poly-Si1-xGex gate
作者: Chen, KM
Huang, HJ
Chang, CY
Huang, TY
Huang, GW
Chen, LP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: poly-SiGe;Co;silicide
公開日期: 1-Mar-2001
摘要: The effects of Ge on the interfacial reaction between Co and poly-Si1-xGex materials were studied. Poly-Si1-xGex layers prepared at 580 degreesC by ultra-high vacuum chemical molecular epitaxy (UHVCME) system were subjected to Co silicidation at various rapid thermal annealing (RTA) temperatures ranging from 500 to 900 degreesC. From X-ray diffractometry (XRD), Co(Si1-xGex) cubic structure was formed with RTA temperature ranging from 500 to 800 degreesC for x = 0.09, while CoSi2 was formed at 900 degreesC. However, for x = 0.21, Co(Si1-yGey) persisted even after 900 degreesC RTA annealing, and CoSi2 was not found. These results indicate that Ge atoms retard the formation of CoSi2, As a result, the RTA temperature needed to obtain low sheet resistance has to be increased with increasing Ge content. Finally, p-channel metal-oxide-semiconductor (MOS) transistors with poly-Si1-xGex-gate have been successfully integrated with Co salicidation process. (C) 2001 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(00)00385-0
http://hdl.handle.net/11536/29789
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(00)00385-0
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 69
Issue: 1-3
起始頁: 84
結束頁: 88
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