Behaviors of negative resistances and its influences on VCO design

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kao, YH	en_US
dc.contributor.author	Wu, TH	en_US
dc.date.accessioned	2014-12-08T15:44:16Z	-
dc.date.available	2014-12-08T15:44:16Z	-
dc.date.issued	2001-02-01	en_US
dc.identifier.issn	0916-8524	en_US
dc.identifier.uri	http://hdl.handle.net/11536/29888	-
dc.description.abstract	The features of the negative resistance in common source and common gate FET configurations for wideband VCO are studied. They are also explained by the simplified three-capacitor model. A design procedure is then developed. The results are applied to a design of wide band oscillator at the several gigahertz region.	en_US
dc.language.iso	en_US	en_US
dc.subject	oscillator	en_US
dc.subject	VCO	en_US
dc.subject	wideband	en_US
dc.subject	negative resistance	en_US
dc.title	Behaviors of negative resistances and its influences on VCO design	en_US
dc.type	Article	en_US
dc.identifier.journal	IEICE TRANSACTIONS ON ELECTRONICS	en_US
dc.citation.volume	E84C	en_US
dc.citation.issue	2	en_US
dc.citation.spage	243	en_US
dc.citation.epage	248	en_US
dc.contributor.department	傳播研究所	zh_TW
dc.contributor.department	Institute of Communication Studies	en_US
dc.identifier.wosnumber	WOS:000166825700015	-
dc.citation.woscount	0	-
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