統計資料
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| Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM application | 111 |
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| Improved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM application | 111 |
| 檢視 |
|---|
| 檢視 | |
|---|---|
| 中國 | 101 |
| 美國 | 10 |
| 檢視 | |
|---|---|
| Shenzhen | 94 |
| Changchun | 7 |
| Menlo Park | 6 |
| Kensington | 3 |
| University Park | 1 |