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dc.contributor.authorWang, Sheng-Yuen_US
dc.contributor.authorTsai, Chen-Hanen_US
dc.contributor.authorLee, Dai-Yingen_US
dc.contributor.authorLin, Chih-Yangen_US
dc.contributor.authorLin, Chun-Chiehen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:44:21Z-
dc.date.available2014-12-08T15:44:21Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2010.11.058en_US
dc.identifier.urihttp://hdl.handle.net/11536/29953-
dc.description.abstractIn this study, we have investigated the effect of current compliance during forming process on resistive switching (RS) characteristics of the Ti/ZrO(2)/Pt device. The higher the current compliance is, the larger RS operation voltage is needed. The Ti/ZrO(2)/Pt device with high device yield can be operated over 10,000 RS cycles by sweeping dc voltage. and the on and off two memory states exhibit good stability under 0.3 V stress voltage. Moreover, the data retention of both memory states is over 10(5) s. As applying +6-V 10-ns and -3-V 10-ns voltage pulses on the device, there are operation errors observed during continuous write-read-erase-read cycles until increasing the pulse width to 50 ns. Nondestructive readout tests are also performed on the Ti/ZrO(2)/Pt device before and after 10(3) pulse cycles without any obvious degradation observed. Compared with reported ZrO(2)-based memory devices, our Ti/ZrO(2)/Pt device exhibits better RS properties and has a high potential for memory application. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleImproved resistive switching properties of Ti/ZrO(2)/Pt memory devices for RRAM applicationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.mee.2010.11.058en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume88en_US
dc.citation.issue7en_US
dc.citation.spage1628en_US
dc.citation.epage1632en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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