Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Chia-Wen | en_US |
dc.contributor.author | Deng, Chih-Kang | en_US |
dc.contributor.author | Chang, Che-Lun | en_US |
dc.contributor.author | Liao, Ta-Chuan | en_US |
dc.contributor.author | Lei, Tan-Fu | en_US |
dc.date.accessioned | 2014-12-08T15:44:21Z | - |
dc.date.available | 2014-12-08T15:44:21Z | - |
dc.date.issued | 2008-04-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.47.3024 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/29954 | - |
dc.description.abstract | High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with a floating-channel active region (FC poly-Si TFTs) are proposed in this study. A high-quality poly-Si channel film accompanied by a larger grain size and fewer microstructural defects could be obtained. Compared with the conventional poly-Si TFTs (CN poly-Si TFTs), the fabricated FC poly-Si TFTs exhibit superior electrical characteristics, including lower threshold voltage, higher field-effect mobility, and lower trap state density. These electrical performance improvements could be attributed to the fact that the a-Si film with a floating-channel structure can relieve the stress generated from the crystallization process accompanying the trap state density reduction and grain size enhancement. In addition, the FC poly-Si TFTs also exhibit improved hot-carrier stress immunity due to the reduced weak Si-H bonds from fewer grain boundaries in the poly-Si channel. Therefore, the proposed FC poly-Si TFTs can be easily fabricated by conventional solid-phase crystallization, and suitable for future high-performance flat-panel display applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | floating-channel structure | en_US |
dc.subject | surface nucleation | en_US |
dc.subject | solid-phase crystallization (SPC) | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.title | High-performance solid-phase crystallized polycrystalline silicon thin-film transistors with floating-channel structure | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1143/JJAP.47.3024 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 47 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 3024 | en_US |
dc.citation.epage | 3027 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000255449100152 | - |
Appears in Collections: | Conferences Paper |
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