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dc.contributor.authorTsai, Chun-Chienen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorWang, Jyh-Liangen_US
dc.contributor.authorWei, Kai-Fangen_US
dc.contributor.authorLee, I-Cheen_US
dc.contributor.authorChen, Chih-Chungen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:44:30Z-
dc.date.available2014-12-08T15:44:30Z-
dc.date.issued2008-03-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2007.10.029en_US
dc.identifier.urihttp://hdl.handle.net/11536/30042-
dc.description.abstractIn this work, high-performance low-temperature poly-silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral grain growth have been demonstrated by excimer laser crystallization (ELC). Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current-voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs. The proposed ELC DG TFTs (W/L = 1.5/1.5 mu m) had the field-effect-mobility exceeding 400 cm(2)/V s, on/off current ratio higher than 10(8), superior short-channel characteristics and higher current drivability. (c) 2007 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectexcimer laser crystallizationen_US
dc.subjectdouble-gateen_US
dc.subjectthin film transistor (TFT)en_US
dc.titleHigh-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallizationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.sse.2007.10.029en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume52en_US
dc.citation.issue3en_US
dc.citation.spage365en_US
dc.citation.epage371en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000255529100006-
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