完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Sheen, CS | en_US |
dc.contributor.author | Chi, S | en_US |
dc.date.accessioned | 2014-12-08T15:44:30Z | - |
dc.date.available | 2014-12-08T15:44:30Z | - |
dc.date.issued | 2001 | en_US |
dc.identifier.issn | 0914-4935 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30043 | - |
dc.description.abstract | A new sacrificial-etching-window (SEW) structure is reported for the first time, which can be used for most complementary metal-oxide-semiconductor (CMOS) compatible sensor structures. Using a buried sacrificial layer, the etching windows of the substrate can be extended beneath the membrane. The SEW technique combines the advantages of both surface micromachining by using a sacrificial layer structure and bulk micromachining by anisotropic etching of a silicon substrate. Using the SEW structure, one can speed up the etching rate and design a larger membrane with a larger active area. Several sensors are fabricated by 1.2 mum industrial CMOS IC technologies combined with subsequent anisotropic front-side etching stops. Three kinds of SEW thermoelectric sensors are reported in this paper, and the characteristics of the sensors are analyzed and measured. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | sacrificial | en_US |
dc.subject | CMOS | en_US |
dc.subject | thermoelectric | en_US |
dc.subject | sensor | en_US |
dc.title | A new process technique for complementary metal-oxide-semiconductor [CMOS] compatible sensors | en_US |
dc.type | Article | en_US |
dc.identifier.journal | SENSORS AND MATERIALS | en_US |
dc.citation.volume | 13 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 57 | en_US |
dc.citation.epage | 66 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000169956200005 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |