标题: | THE CHARACTERIZATION OF AL2O3 PREPARED BY ANODIC-OXIDATION |
作者: | YEH, CF CHENG, JY LU, JH 交大名义发表 电控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
关键字: | ANODIC OXIDATION;ALUMINUM;ALPHA-SI TFT;HILLOCK;AL2O3;DOUBLE-LAYER |
公开日期: | 1-六月-1993 |
摘要: | Aluminum is a good candidate of low resistivity metal as a gate electrode metal and a gate bus-line metal in amorphous silicon thin-film transistor of liquid crystal display. But it easily brings about hillocks and whiskers during the heat process, and causes defects. Al2O3 formed on aluminum layer is expected to work as a protective layer against hillock formation. The formation of Al2O3 is developed by anodic oxidation method. The electrical characteristics of Al2O3 layers formed at constant DC anodic bias or constant DC current density were investigated. The optimal growth condition of Al2O3 has been developed. In addition, the double-layer of Al2O3/SiN is also shown to be sufficiently protective against hillock formation. |
URI: | http://dx.doi.org/10.1143/JJAP.32.2803 http://hdl.handle.net/11536/3010 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.32.2803 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 32 |
Issue: | 6A |
起始页: | 2803 |
结束页: | 2808 |
显示于类别: | Articles |
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