標題: | Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization |
作者: | Chu, CF Yu, CC Wang, YK Tsai, JY Lai, FI Wang, SC 光電工程學系 Department of Photonics |
公開日期: | 20-十一月-2000 |
摘要: | In this letter, a low-resistance ohmic contact on p-type GaN using an alloy of Ni/Pd/Au is reported. The Mg doped p-type GaN samples were grown by metalorganic chemical vapor deposition with a carrier concentration of 4.1x10(17) cm(-3). The as-grown Mg doped samples were deposited with Ni (20 nm)/Pd (20 nm)/Au (100 nm) and then annealed in air, nitrogen, and oxygen ambient conditions at different annealing temperatures ranging from 350 to 650 degreesC. Linear I-V ohmic characteristics were observed with specific resistance as low as 1.0x10(-4) Omega cm(2) for the samples annealed in oxygen atmosphere. Similar contact metal composition was also deposited on Be-implanted p-type GaN samples with a carrier density of 8.1x10(19) cm(-3). Without further annealing process, the samples show good ohmic contact with a lowest specific resistance of 4.5x10(-6) Omega cm(2). (C) 2000 American Institute of Physics. [S0003-6951(00)01847-7]. |
URI: | http://hdl.handle.net/11536/30129 |
ISSN: | 0003-6951 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 77 |
Issue: | 21 |
起始頁: | 3423 |
結束頁: | 3425 |
顯示於類別: | 期刊論文 |