OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHEN, YF	en_US
dc.contributor.author	DAI, YT	en_US
dc.contributor.author	CHOU, HP	en_US
dc.contributor.author	CHANG, DC	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	WANG, PJ	en_US
dc.date.accessioned	2014-12-08T15:04:31Z	-
dc.date.available	2014-12-08T15:04:31Z	-
dc.date.issued	1993-05-24	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.109241	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3012	-
dc.description.abstract	We report the first study of quantum confinement shifts of energy gap in strained Si0.84Ge0.16/Si quantum wells at room temperature by photothermal deflection spectroscopy (PDS) technique. The experimental results obtained from the amplitude and phase of the PDS signal are in good agreement with quantum well subband calculation.	en_US
dc.language.iso	en_US	en_US
dc.title	OBSERVATION OF QUANTUM CONFINEMENT EFFECTS IN STRAINED SI0.84GE0.16/SI QUANTUM-WELLS AT ROOM-TEMPERATURE	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.109241	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	62	en_US
dc.citation.issue	21	en_US
dc.citation.spage	2713	en_US
dc.citation.epage	2715	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993LD12300040	-
dc.citation.woscount	7	-
顯示於類別：	期刊論文